H8NA60FI Datasheet PDF Download – STH8NA60FI, H8NA60FI data sheet. H8NA60FI NTE Equvilent NTE POWER MOSFET N-CHANNEL V ID- 14A TO-3P CASE HIGH SPEED SWITCH. NTE Data Sheet Data Sheet. NTE. H8NA60FI Datasheet: N – CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR, H8NA60FI PDF Download STMicroelectronics, H8NA60FI.

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Normalized On Resistance vs Temperature. Turn-off Drain-source Voltage Slope. Include your shipping catasheet and preferred shipping method. Pulse width limited by safe operating area. Specialize in obsolete transistors and hard-to-find parts at cheap price.

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Thermal Impedance for TO Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.


H8NA60FI 데이터시트(PDF) – STMicroelectronics

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Datasheet or technical specification in PDF format is available on request for download. Paypal accepted, order online today! Gate Charge vs Gate-source Voltage. Gat e Threshold Voltage V. Normalized Gate Threshold Voltage vs Temperature.

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H8NA60FI View Datasheet(PDF) – STMicroelectronics

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Static Drain-source On Resistance. With 11 years of professional experience in distribution in this area, we own a big and professional sale team with members from all over the world. Unclamped Inductive Load Test Circuit. Source-drain Current Source-drain Current pulsed. We can also ship via registered air mail, Normally will take days to airrive at your office.

H8NA60F1 datasheet

Derating Curve for TO Get a partial refund and keep the item. Single Pulse Avalanche Energy starting T. Timely product updates, keen market sense 5.


We Provode 6 months warranty for our product. T otal Dissipat ion at T. H8NA60FI is able to ship same day. Safe Operating Area for TO On State Drain Current.

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