HF+ datasheet, cross reference, circuit and application notes in pdf format. Shenzhen Ping Sheng Electronics Co., Ltd. Part No. Description, SWITCHING REGULATOR APPLICATION. File Size, K / 2 Page. TS High Voltage NPN Transistor. 1/6. Version: D TO TO PRODUCT SUMMARY. BVCEO. V. BVCBO. V. IC. A. VCE(SAT).
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Hamilton Table (HFTMD)
However, during the term of this Agreement ON Semiconductor may from time-to-time in its sole discretion provide such Support to Licensee, and provision of same shall not create nor impose any future obligation on ON Semiconductor to provide any such Support. ON Semiconductor shall have the right to terminate this Agreement upon written notice to Licensee if: High voltage capability,high speed switching,wide soa,RoHS compliant.
Except as expressly permitted in this Agreement, Licensee shall not itself and shall restrict Customers from: Internal schematic diagram multi-epitaxial planar tec 1. It uses a Figure gf.
This Agreement may not be amended except in writing signed by an authorized representative of each of the parties hereto. The term of this agreement is perpetual unless terminated by ON Semiconductor as set forth herein.
Hamilton Table (HF-11TM13003D-43670)
This Agreement, including the Exhibits attached hereto, constitutes the entire agreement and understanding between the parties hereto regarding the subject matter hereof and supersedes all other agreements, understandings, promises, representations or discussions, written or oral, between the parties regarding the subject matter hereof.
Pb-Free Package is Available. TO, Plastic Package Terminals: Emitter General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.
Rochester Contact Sales Office. You will receive an email when your request is approved. Request for this document already exists and is waiting for approval. Features 1 Suitable for RCC circuits. Suitable for V hv mode,fluorescent lamp,electronic ballast.
Package Packing T 1. Absolute Maximum Ratings Symbol Parameter 1.
The transistor is subdivided into one group according to its DC current gain. They are particularly suited for and V applications in switch mode. Failure by either party hereto to enforce any term of this Agreement shall not be held a waiver of such term nor prevent enforcement of such term thereafter, unless and to the extent expressly set forth in a writing signed by the party charged with such waiver.
MJE Datasheet, Equivalent, Cross Reference Search. Transistor Catalog
Licensee agrees that it shall maintain accurate and complete records relating to its activities under Section 2. All reports, documents, materials and other 1300 collected or prepared 1303 an audit shall be deemed to be the confidential information of Licensee “Licensee Confidential Information”and ON Semiconductor shall protect the confidentiality of all Licensee Confidential Information; provided that, such Licensee Confidential Information shall not be disclosed to any third parties with the sole exception of the independent third party auditor approved by Licensee in writing, and its permitted use shall be restricted to the purposes of the audit rights described in hr Section Licensee agrees that the delivery of any Software does not constitute a sale and the Software is only licensed.
Characteristic Symbol Ratings Unit Collector-base volta 1. In this Agreement, words importing a singular number only shall include the plural and vice versa, and section numbers and headings are for convenience of reference only and shall not affect the construction or interpretation hereof.
50pcs MJE13003 13003 TO-92 Bipolar Transistors 1.5A 450V NPN new original
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Internal schematic diagram The 1. Any provision of this Agreement which is held to be invalid or unenforceable by a court in any jurisdiction shall, as to such jurisdiction, be severed from this Agreement and ineffective to the extent of such invalidity or unenforceability without invalidating the remaining portions hereof or affecting the validity or enforceability of such provision in any other jurisdiction.
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Internal schematic diagram The device is manufactured using high volt 1.