Huge on-chip eDRAM L3. – 6x latency improvement. – No off-chip signaling rqmt. – 8x bandwidth improvement. – 3x less area than SRAM. – 5x less energy than. In a previous Power8 article, the performance and scaling benefits of IBM’s eDRAM capability were mentioned. One thing that should be stated. IBM Corp. took another step toward embedded DRAM and away from SRAM at ISSCC this week, pushing eDRAM as the technology to take over the SRAM.

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With software multi-threaded heavy workloads, where the data in the cache will be accessed simultaneously by multiple cores and hardware strands, eDRAM may suffer in comparison to multi-ported SDRAM due to excessive inefficient re-loads from main memory and inefficient sharing. Interest in the open-source ISA marks a significant shift among chipmakers, but it will require continued industry support to be successful.

October 29, No Comment. Minimizing Chip Aging Effects Understanding aging factors within a design can help reduce the likelihood of product failures. October 29, 2 Comments. As shown, the memory is embedded into the Centaur chip, but is off-chip eeram the Power8.

GlobalFoundries 14HP process, a marriage of two technologies – Page 4 – WikiChip Fuse

AMD has the volume to use this tech. Enabling Cheaper Design Brian Bailey. Power is not a substantial eddram in the Network Management world, so I would not really expect engineers to tune the CPU for this type of workload. This will go down as a good year for the semiconductor industry, where new markets and innovation were both necessary and rewarded. Experts at the Table, Part 1: There, the fin switches from mono-Si to poly-Si which forms the connection to the DT capacitor.


Fab Equipment Challenges For Logic is strong, memory is weak, and uncertainty in China could affect demand. Figure 3 also shows a picture of the metal-insulator-metal MIM structure of the capacitor for the bit cell. Edra has been using DT structures for four generations now since their 45nm node and have since gained significant know-how working with DT structures and testing them.

Knowledge Centers Entities, people and technologies explored Efram More. If so maybe in zen 2? December 25, 17 Comments. June 18, at David February 23, at 5: Below is a cross-sectional SEM shot of the entire stack from the 40x power rails at the very top to the deep trench capacitors under the devices. First, by adding the L3 cache onto the chip December 20, No Comment. One thing that is immediately noticeable is that the eDRAM is sitting alone in its own chip.

Haswell package layout diagram [3], [4]. The Deep trench extends through the top silicon, through the oxide layer and into the base substrate. I would expect that engineers tuned Power for the Database market.

Clearly, this is more efficient than having to go off-package but not as efficient as staying on-chip. DTs are traditionally created by etching an opening in the hardmask or alike layer.

A poly strap i. Network Management does require long term storage requirements of data, so this may be a very good back-end platform. On the FinFET, the strap is formed where the base of the fin lands at deep trench.


IBM Unveils World’s Fastest On-Chip Dynamic Memory Technology

Because of the growing needs to keep the data closer and certainly as more pieces of the system continue to get incorporated onto the same die, there appears to be renewed interest in eDRAM. There are also a lot of other factors that come into play when evaluating DRAM, such as performance and data retention, but this at least provides a quick high-level comparison. With multi-process heavy workloads, where data in the cache may not be simultaneously accessed from different cores or hardware strands, eDRAM may be a good fit.

This name will be displayed publicly. Since this eliminates the need for the sidewall nitride spacer they have always used previously in order to protect the BOx during the interim processes, this change effectively managed to extract additional density from the denser packing of the trenches.

GlobalFoundries 14HP process, a marriage of two technologies

GlobalFoundries 14HP boasts an ultra-dense 0. In this 14nm process IBM switched to a FinFET from ecram planar transistor which introduces a new set of challenges since they now have to connect to a thin fin meaning the strap size is also reduced meaning resistivity becomes a more profound problem.

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