IRFPE50, SiHFPE Vishay Siliconix. FEATURES. • Dynamic dV/dt Rating. • Repetitive Avalanche Rated. • Isolated Central Mounting Hole. IRFPE50 datasheet, IRFPE50 pdf, IRFPE50 data sheet, datasheet, data sheet, pdf, International Rectifier, V Single N-Channel HEXFET Power MOSFET in a . IRFPE50 datasheet, IRFPE50 circuit, IRFPE50 data sheet: IRF – Power MOSFET( Vdss=V, Rds(on)=ohm, Id=A),alldatasheet, datasheet, Datasheet.

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N-channel MOSFET, IRFPEIR | Loging Electronics

The MOSFET is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. Fluke, Mikroelektronika, Knipex and Logitech.


Compared to the other power semiconductor devices, for example IGBT, Thyristor, its main advantages are high commutation speed and good efficiency at low voltages. Equipment for testing of medical equipment.

Drain-Source resistance Rds-on max. Computer components Hardware Network Notebook-Battery.

It shares with the IGBT an isolated gate that makes it easy to drive. Telecommunication measuring equipment Cable and pipe tracing Cooper networks IT networks Optical networks Spectrum analysers more Region Macedonia Kosovo Global.

Because these two terminals are normally connected to each other short-circuited internally, only three terminals appear in electrical diagrams. Drain – Source Voltage Vdss. satasheet


Cables, Accessories Cables Accessories. Nut M3 PJP 0. Comments 0 Write your comment. FETs are unipolar transistors as they involve single-carrier-type operation.

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IRFPE50 Datasheet PDF – International Rectifier

The Field-Effect Transistor FET is a transistor that uses irfpr50 electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material. Free technical support If something goes wrong, we will be ready and willing to help! Gate threshold voltage Vgs th. The customer is in the focus We want to make sure that customer is the center of attention.

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